t he mark < r> s how s major rev is ed point s. t he rev ised point s c an be eas ily s earc hed by copy ing an "" in the pdf file and spec ify i ng it in the "find w hat:" field. preliminary data sheet nesg210719 npn sige rf transistor for low noise, high-gain a mplif icat ion 3-p in ult ra s uper minimold (19, 1608 pkg) features ? t he nesg210719 is an ideal choice for o s c, low noise, high-gain amplification ? high breakdow n voltage technology for sige t r. ? 3-pin ultra super minimold (19, 1608 pkg) ordering information part number order number package quantity supply i ng form s c p 0 5 a - 9 1 7 0 1 2 g s e n 9 1 7 0 1 2 g s e n (non reel) nesg210719-t1 NESG210719-T1-A 3-pin ultra super minimold (19, 1608 pkg) (pb-free) 3 kpcs/r eel ? 8 mm w i de em bossed t aping ? pin 3 (collector) face the perforation side of the tape remark t o order evaluation samples, please contact y our nearby sales o ffice. unit sample quanti ty is 50 pcs. absolute maximum ratings (t a = +25 c ) parameter sy mbol ratings unit collect or t o base volt age v cbo 13.0 v collector to emitter voltage v ceo 5. 5 v emitter to base voltage v ebo 1. 5 v i t n e r r u c r o t c e l l o c c 100 ma t o t al p o w er dissipat ion p tot note 200 mw junction temperature t j 150 c storage temperature t s tg ? 65 to +150 c note mounted on 1.08 c m 2 1 .0 mm ( t) glass epoxy pc b caution observe precautions when handling because these devic es are sensitive to el ectrostatic discharge. r09ds0051ej0400 rev.4.00 sep 24, 2012 8 f o 1 e g a p 0 0 . 4 . v e r 0 0 4 0 j e 1 5 0 0 s d 9 0 r sep 24, 2012 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
electrical characteristics (t a = +25 c ) parameter sy mbol test conditions min. ty p. max. unit s c i t s i r e t c a r a h c c d collector cut-off current i cbo v cb = 5 v, i e = 0 ? ? 100 na emitter cut-off current i ebo v e b = 0. 5 v, i c = 0 ? ? 100 na h n i a g t n e r r u c c d f e note 1 v ce = 1 v, i c = 5 ma 140 180 220 ? s c i t s i r e t c a r a h c f r gain bandw idth product (1) f t v ce = 1 v, i c = 5 ma, f = 2 g hz 7 10 ? g h z gain bandw idth product (2) f t v ce = 1 v, i c = 20 ma, f = 2 g hz ? 12 ? g h z ins erti on pow er gai n (1) s 21e 2 v ce = 1 v, i c = 5 ma, f = 2 g hz 6. 5 8 ? d b ins erti on pow er gai n (2) s 21e 2 v ce = 1 v, i c = 20 ma, f = 2 g hz ? 9 ? d b f n e r u g i f e s i o n v ce = 1 v, i c = 5 ma, f = 2 g hz, z s = z opt ? 0.9 1.5 db g n i a g d e t a i c o s s a a v ce = 1 v, i c = 5 ma, f = 2 g hz, z s = z opt 6 9 ? d b reverse transfer capacitance c r e note 2 v cb = 1 v, i e = 0, f = 1 mhz ? 0.5 0.7 pf n o tes 1. pulse measurement: pw 350 s, duty cy cle 2% 2 . collector to base capacit ance w hen the emitter grounded h f e classification rank fb/y fb marking d7 h f e value 140 to 220 nesg210719 8 f o 2 e g a p 0 0 . 4 . v e r 0 0 4 0 j e 1 5 0 0 s d 9 0 r sep 24, 2012 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
typical characteristics (t a = +25 c, unless otherw ise specified) 300 250 150 100 50 0 25 50 75 100 125 150 0.7 0.3 0.1 0 2 4 6 8 10 12 0.6 0.4 0.2 f = 1 mhz 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0 . 1 9 . 0 8 . 0 4 . 0 v ce = 1 v 200 200 mw 0.5 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0 . 1 9 . 0 8 . 0 4 . 0 v ce = 2 v 100 80 60 40 20 0 2 1 3 5 6 4 240 a 160 a 400 a 320 a 560 a 480 a 720 a 800 a i b = 80 a 640 a total power dissipation p tot (mw) total power dissipation vs. ambient temperature mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) ambient temperature t a (?c) reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage base to emitter voltage v be (v) collector current i c (ma) collector current vs. base to emitter voltage base to emitter voltage v be (v) collector current i c (ma) collector current vs. base to emitter voltage collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage remark t he graphs indicate nominal characteristics. nesg210719 8 f o 3 e g a p 0 0 . 4 . v e r 0 0 4 0 j e 1 5 0 0 s d 9 0 r sep 24, 2012 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
v ce = 1 v 1 000 100 10 0.1 1 10 100 v ce = 2 v 1 000 100 10 0.1 1 10 100 v ce = 3 v 1 000 100 10 0.1 1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current 20 18 16 14 12 10 8 6 4 2 0 1 10 100 v ce = 1 v f = 2 ghz 20 18 16 14 12 10 8 6 4 2 0 1 10 100 v ce = 2 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current remark t he graphs indicate nominal characteristics. nesg210719 8 f o 4 e g a p 0 0 . 4 . v e r 0 0 4 0 j e 1 5 0 0 s d 9 0 r sep 24, 2012 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
35 25 20 15 10 5 0 30 v ce = 1 v i c = 5 ma 0.1 1 10 100 |s 21e | 2 35 25 20 15 10 5 0 30 v ce = 1 v i c = 20 ma 0.1 1 10 100 |s 21e | 2 35 25 20 15 10 5 0 30 v ce = 2 v i c = 5 ma 0.1 1 10 100 35 25 20 15 10 5 0 30 v ce = 2 v i c = 20 ma 0.1 1 10 100 |s 21e | 2 |s 21e | 2 frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) mag mag msg msg mag msg msg mag mag msg mag msg mag msg msg mag frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) remark t he graphs indicate nominal characteristics. nesg210719 8 f o 5 e g a p 0 0 . 4 . v e r 0 0 4 0 j e 1 5 0 0 s d 9 0 r sep 24, 2012 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
25 20 15 10 5 0 1 10 100 v ce = 1 v f = 1 ghz |s 21e | 2 15 10 5 0 ?5 1 10 100 v ce = 1 v f = 2 ghz |s 21e | 2 10 5 0 ?5 1 10 100 v ce = 1 v f = 4 ghz |s 21e | 2 20 15 10 5 0 1 10 100 v ce = 2 v f = 1 ghz |s 21e | 2 20 15 10 5 0 1 10 100 v ce = 2 v f = 2 ghz |s 21e | 2 10 5 0 ?5 1 10 100 v ce = 2 v f = 4 ghz |s 21e | 2 mag msg mag msg mag mag msg mag msg mag collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) remark t he graphs indicate nominal characteristics. nesg210719 8 f o 6 e g a p 0 0 . 4 . v e r 0 0 4 0 j e 1 5 0 0 s d 9 0 r sep 24, 2012 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/ nesg210719 8 f o 7 e g a p 0 0 . 4 . v e r 0 0 4 0 j e 1 5 0 0 s d 9 0 r sep 24, 2012 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
package dimensions 3-pin ultra super minimold (19, 1608 pkg) (unit: mm) 0.750.05 0.6 0 to 0.1 0.15 +0.1 ?0.05 1.60.1 1.0 0.5 0.5 0.3 +0.1 ?0 1.60.1 0.80.1 0.2 +0.1 ?0 1 2 3 pin connections 1. emitter 2. base 3. collector d7 nesg210719 8 f o 8 e g a p 0 0 . 4 . v e r 0 0 4 0 j e 1 5 0 0 s d 9 0 r sep 24, 2012 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
revision history nesg210719 data sheet description rev. date page summary 0.01 oct 15, 2003 ? preliminary edition issued 1.00 oct 13, 2004 ? first edition issued 2.00 aug 23, 2005 ? second edition issued 3.00 jan 21, 2008 ? third edition issued 4.00 sep 24, 2012 throughout the co mpany name is changed to renesas electronics corporation. p.1 modification of features p.1 modification of ordering information p.1 modification of absolute maximum ratings p.2 modification of electrical characteristics p.2 modification of h fe classification p.7 modification of met hod for obtaining s-parameters all trademarks and registered tr ademarks are the property of their respective owners. c - 1
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